GaN power device market is expected to witness market growth at a rate of 49.95% in the forecast period of 2021 to 2028. Data Bridge Market Research report on GaN power device market provides analysis and insights regarding the various factors expected to be prevalent throughout the forecast period while providing their impacts on the market’s growth.
Gallium nitride (GaN) transistors have progressed as an improved performance alternative of silicon-based transistors, due to their capacity of constructing more dense devices for an assumed resistance value and breakdown voltage in comparison to the silicon devices.
GaN Power Device Market research report has put forth a bench-marking example for a vibrant market that explores several recommendations and practical growth strategies in relation to the market. The market report covers a wide spectrum of regions and also focuses on key regions that include North America, Europe, Asia Pacific, Middle East, South America, and the Middle East & Africa (MEA). The chapter of the competitive landscape is presented well in the market research report and is analyzed based on the tools such as Porter’s five forces analysis. The study throws light upon market attractiveness where all the segments are arranged based on the compound growth rate, size, and general attractiveness.
Get a Free Sample of The Report: https://www.databridgemarketresearch.com/request-a-sample/?dbmr=global-gan-power-device-market
Market Insights and Scope
Major factors that are expected to boost the growth of the GaN power device market in the forecast period are the vast revenue generation from the customer electronics and automotive verticals and the wide bandgap property of GaN material supporting innovation. Furthermore, the
achievement of GaN in the RF-power electronics, the rise in the acceptance and the growing adoption of GaN RF power device in military, defense, and aerospace vertical are further propelling the growth of the GaN power device market. On the other hand, the struggle from sic devices in the high-voltage power applications is further expected to obstruct the growth of the GaN power device market in the timeline period. In addition, the potential utilization of GaN in 5g infrastructure.
An excellent Data bridge market research report covers the systematic and comprehensive market research study, to provide the facts and figures allied with any subject in the field of marketing. With the specific and state-of-the-art information presented in this industry report, businesses can be aware about the types of consumers, consumer’s demands and preferences, their perspectives about the product, their buying intentions, their response to particular product, and their varying tastes about the specific product already existing in the Semiconductors and Electronics industry. Quality and transparency are strictly maintained while carrying out research studies to offer an exceptional market research report for specific niche.
Get full access to the report: https://www.databridgemarketresearch.com/reports/global-gan-power-device-market
Industry Segmentation and Size
The GaN power device market is segmented on the basis of device type, voltage range, application, vertical, technology, wafer material and wafer size. The growth among segments helps you analyse niche pockets of growth and strategies to approach the market and determine your core application areas and the difference in your target markets.
- On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device. RF power device is further sub segmented into discrete RF power device and integrated RF power device. GaN power discrete devices is further sub segmented into GaN power non-RF devices and GaN power RF devices. GaN power ICs is further sub segmented into MMIC and hybrid.
- On the basis of voltage range, the GaN power device market is segmented into <200 volt, 200–600 volt, >600 volt),
- On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging. Supply and inverter is further sub segmented into switch-mode power supply, inverter, wireless charging and EV charging. Radio frequency is further sub segmented into radio frequency front-end module, repeater/booster/das and radar and satellite.
- On the basis of vertical, the GaN power device market is segmented into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense and aerospace, medical.
- On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
- On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
- On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.
Market Country Level Analysis
· The countries covered in the GaN power device market report are the U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).
· The major players covered in the GaN power device market report are Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America separately.
GaN Power Device Market Report Answers the Following Questions:
What is the expected growth rate of the GaN Power Device Market during the forecast period?
What are the various factors that are likely to drive the growth of the GaN Power Device Market?
What are the major challenges faced by the GaN Power Device Market, and how are they being addressed?
Who are the key players operating in the GaN Power Device Market, and what are their strategies for growth?
What are the emerging trends in the GaN Power Device Market, and how are they expected to shape the market in the coming years?
About Us:
Data Bridge Market Research set forth itself as an unconventional and neoteric Market research and consulting firm with an unparalleled level of resilience and integrated approaches. We are determined to unearth the best market opportunities and foster efficient information for your business to thrive in the market
Contact:
Data Bridge Market Research
Tel: +1-888-387-2818
Email: Sopan.gedam@databridgemarketresearch.com
Arabic
Français
Español
Português
Deutsch
Türkçe
Dutch
Italiano
Russian
Romaian