GaN Epitaxial Wafers: Driving Efficiency In Renewable Energy
GaN Epitaxial Wafers are typically produced with a thickness of 1 to 3 microns. The thickness of the GaN layer can affect the performance of the resulting electronic devices, with thicker layers generally producing better performance. However, thicker layers also require more material and can lead to higher production costs. The optimal thickness of the GaN layer depends on the specific application and device requirements. One of the challenges in producing high-quality GaN Epitaxial Wafers is the presence of defects in the crystal structure. Defects can arise from a variety of sources, including lattice mismatch with the substrate, impurities in the precursors, and stresses during the growth process. Defects can degrade the performance of electronic devices, especially for high-frequency and high-power applications.
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