IGBT and Super Junction MOSFET Market is Estimated to Witness High Growth Owing to Rising Demand from Electric Vehicles and Renewable Energy Industries
IGBT (Insulated Gate Bipolar Transistor) and Super Junction MOSFET are electronic devices that are used as switches or rectifiers in many power conversion applications such power supplies, motor controls, and traction applications. IGBTs and MOSFETs serve as the backbone of power electronics circuits and play a key role in switching and commutating electric power efficiently. They are widely used in industrial motor drives, consumer goods, automotive systems, and renewable energy applications such as solar inverters and wind turbine generators.
The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 12.% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.
Market Dynamics:
The growth of the IGBT and Super Junction MOSFET Market is primarily attributed to the rising demand from electric vehicles and renewable energy industries, which acts as the key driver. Electric vehicles and renewable energy applications require power electronic switches that can efficiently and reliably handle medium to high power levels. IGBTs and MOSFETs meet these requirements and allow optimal conversion of electric power. In addition, IGBTs provide higher efficiency and power density compared to other switched-mode power semiconductor devices like MOSFETs, BJTs (Bi-polar Junction Transistors), and thyristors. These advantages have increased their use in solar inverters, variable frequency drives, motor controls, and electric vehicle power trains. Moreover, initiatives toward electric mobility and clean energy adoption by governments worldwide are promoting investments in related industries, thereby fueling the market growth over the forecast period.
SWOT Analysis
Strength: The IGBT and Super Junction MOSFET market provides high-efficiency power switching solutions for several industrial applications. Customers benefit from reduced power losses, noise emission and improved thermal performance compared to alternative technologies. Manufacturers have developed robust supply chains and production methods for these devices.
Weakness: Designing devices with high voltage blocking capabilities remains technically challenging. Debugging and validating new devices requires heavy investment in testing infrastructure. Customers also have to invest in redesigning their products to fully leverage the benefits of these advanced power devices.
Opportunity: Emerging industries such as electric vehicles, renewable energy and power supplies offer significant growth opportunities. Continued miniaturization of devices allows their usage in more compact product form factors.
Threats: Customers may shift to alternative wide bandgap technologies like SiC and GaN that promise even better performance. Market domination by a few large vendors poses supply chain risks. Trade barriers or geopolitical conflicts can disrupt international commerce.
Key Takeaways
The Global IGBT And Super Junction MOSFET Market Size is expected to witness high growth over the forecast period of 2023 to 2030. Regional analysis shows that Asia Pacific currently dominates the market with a share of over 35% in 2023 due to strong manufacturing base in China, Japan and other countries. The market in North America and Europe is also growing at a rapid pace driven by increasing electrification of automobiles.
Key players operating in the IGBT and Super Junction MOSFET market include Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd. These companies have well-established manufacturing and distribution networks to serve the global demand for these advanced power devices. Further technological developments and new applications are expected to increase revenue opportunities for market participants over the forecast period.
The regional analysis shows that Asia Pacific dominates over 35% of market share in 2023 mainly due to strong manufacturing base of given devices in countries like China, Japan and other Asian countries. Countries like China, Japan, South Korea are fastest growing market in Asia Pacific region.
Key players operating in the IGBT and Super Junction MOSFET market include Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd. These players have well established manufacturing facilities and distribution network to cater demand globally.
Get More Insights On This Topic: https://cmiresearch.blogspot.com/2023/12/the-global-igbt-and-super-junction.html
English
Arabic
Français
Español
Português
Deutsch
Türkçe
Dutch
Italiano
Romaian