Power electronic devices play a key role in efficiently managing electrical power in various applications across industries like renewable energy, electric vehicles, consumer electronics etc. Over the past few decades, two key power devices - IGBT and Super Junction MOSFET have emerged as frontrunners in power conversion systems. While IGBT has dominated the medium to high power range for a long time, Super Junction MOSFET is catching up fast. Let's analyze how these devices work and where each one stands today.

Insulated Gate Bipolar Transistor (IGBT)

IGBT And Super Junction MOSFET  is a power semiconductor device that combines the simple gate-drive characteristics of the MOSFET with the high-current and low-saturation-voltage capabilities of bipolar junction transistor (BJT). It provides large current flow with a small voltage across it when turned on and behaves like an open switch when turned off.

IGBT Structure and Working

An IGBT consists of an isolated gate field-effect transistor with an embedded bipolar junction transistor. The key layers include P-type substrate, N-type layer, P-type layer, N-type emitter, and metal contacts. When a positive voltage is applied to the gate, the N-type channel under the gate becomes conducting. This allows electrons to flow into the P-type base region, injecting holes into the N-type layer. The injection of holes lowers the resistance of the N-type layer, allowing easy flow of current when the device is switched on.

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