GaN Epitaxial Wafers are typically produced with a thickness of 1 to 3 microns. The thickness of the GaN layer can affect the performance of the resulting electronic devices, with thicker layers generally producing better performance. However, thicker layers also require more material and can lead to higher production costs. The optimal thickness of the GaN layer depends on the specific...
Arabic
Français
Español
Português
Deutsch
Türkçe
Dutch
Italiano
Russian
Romaian