A novel photonic method, to the best of our knowledge, to generate high-frequency micro/millimeter-wave signals based on the optoelectronic oscillator (OEO) with all-optical gain is proposed in this paper. The core device is the monolithically integrated dual-frequency semiconductor laser (MI-DFSL), in which the two DFB laser sections are simultaneously fabricated on one chip. Attributing to the combined impact of the photon-photon resonance effect and the sideband amplification injection locking effect, one widely tunable microwave photonic filter with a high Q value and narrow 3-dB bandwidth can be realized. In this case, the generated microwave signals would largely break the limitation in bandwidth once making full use of the optical amplifier to replace the narrow-band electrical amplifiers in traditional OEO configuration to provide the necessary gain. No additional high-speed external modulator, high-frequency electrical bandpass filters or multi-stage electrical amplifiers are required, highly simplifying the framework and reducing the power consumption. Moreover, this simple and compact structure has the potential to be developed for photonic integration. In the current proof-of-concept experiment, microwave signals with wide tuning ranges from 14.2 GHz to 25.2 GHz are realized. The SSB phase noises in all tuning range are below -103.77 dBc/Hz at 10 kHz and the best signal of the -106.363 dBc/Hz at 10 kHz is achieved at the frequency of 17.2 GHz.A time-resolving filtering technique developed to improve background suppression in Raman spectroscopy is presented and characterized. The technique enables separation of signal contributions via their polarization dependency by the addition of a waveplate to a normal measurement system and data post-processing. As a result, background interferences of broadband laser-induced fluorescence and incandescence, as well as flame luminosity and blackbody radiation, were effectively suppressed from Raman spectra. Experimental setting parameters of the method were investigated under well-controlled conditions to assess their impact on the background-filtering ability, and the overall trend was understood. The fluorescence background was effectively suppressed for all investigated settings of modulation period, number of accumulations, and recording duration, with the spectrum quality preserved after the filtering. For practical application, the method was tested for measurements in a sooting flame accompanied by a strong luminosity and interfering laser-induced background signals. The technique resulted in a 200-fold decrease of the background and allowed for quantitative analyses of concentrations and temperatures from the filtered data. Thus, the method shows strong potential to extend the applicability of Raman spectroscopy, in particular for in situ diagnostics under challenging experimental conditions.In this study, we investigate the spontaneous emission of a quantum emitter nearby black phosphorus (BP) sheet. The spontaneous emission can be modulated mechanically by rotating the BP sheet when the quantum emitter is placed parallel to the sheet. The spontaneous emission is dependent on the electron doping and rotation angle of BP with respect to the x-axis. The Purcell factor decreases with the increase in rotation angle under smaller electron doping. The Purcell factor increases with the increase in rotation angle under larger electron doping. The spontaneous emission of quantum emitter nearby two types of BP ribbon arrays tailored along armchair (type I) and zigzag (type II) directions is studied in detail. The spontaneous emission of quantum emitter parallel to type I is enhanced compared with that parallel to BP sheet. The spontaneous emission decreases remarkably for the quantum emitter parallel to type II compared with that parallel to BP sheet. The spontaneous emission can be flexibly modulated by rotating BP ribbon arrays mechanically in two types. The results obtained in this study provide a new method to actively modulate the spontaneous emission.Manipulating the strong light-matter coupling interaction in optical microresonators that are naturally formed by semiconductor micro- or nanostructures is crucial for fabricating high-performance exciton-polariton devices. Such devices can function as coherent light sources having considerably lower emission threshold. In this study, an exciton-polariton light-emitting diode (LED), made of a single ZnO microwire (MW) and a p-GaN substrate, serving as the hole injector, was fabricated, and its working characteristics, in the near-ultraviolet region, were demonstrated. To further improve the quality of the single ZnO MW-based optical microresonator, Ag nanowires (AgNWs) with ultraviolet plasmonic response were deposited on the MW. Apart from the improvement of the electrical and optical properties of the hexagonal ZnO MW, the optically pumped whispering-gallery-mode lasing characteristics were significantly enhanced. Furthermore, a single ZnO MW not covered, and covered by AgNWs, was used to construct a heterojunction LED. Compared with single bare ZnO MW-based LED, significant enhancement of the device performance was achieved, including a significant enhancement in the light output and a small emission band blueshift. Specifically, the exciton-polariton emission was observably enhanced, and the corresponding Rabi splitting energy (∼ 495 meV) was significantly higher than that of the bare ZnO MW-based LED (∼ 370 meV). That ultraviolet plasmons of AgNWs enhanced the exciton-polariton coupling strength was further confirmed via angle-resolved electroluminescence measurements of the single MW-based polaritonic devices, which clearly illustrated the presence of Rabi splitting and subband anti-crossing characteristics. The experimental results provide new avenues to achieve extremely high coupling strengths, which can accelerate the advancements in electrically driven high-efficiency polaritonic coherent emitters and nonlinear devices.Photonic quantum information processing and communication demand highly integrated device platforms, which can offer high-fidelity control of quantum states and seamless interface with fiber-optic networks simultaneously. https://www.selleckchem.com/products/cct241533-hydrochloride.html Exploiting the unique quantum emitter characteristics compatible with photonic transduction, combined with the outstanding nonlinear optical properties of silicon carbide (SiC), we propose and numerically investigate a single-crystal cubic SiC-on-insulator (3C-SiCOI) platform toward multi-functional integrated quantum photonic circuit. Benchmarking with the state-of-the-art demonstrations on individual components, we have systematically engineered and optimized device specifications and functions, including state control via cavity quantum electrodynamics and frequency conversion between quantum emission and telecommunication wavelengths, while also considering the manufacturing aspects. This work will provide concrete guidelines and quantitative design considerations for realizing future SiCOI integrated photonic circuitry toward quantum information applications.